Microelectronics research at the Chair of Electronic Components (LEB) at Friedrich-Alexander University Erlangen-Nuremberg (FAU)

Infrastructure	Environment
FAU clean room laboratory Joint operation by the Chair of Electronic Components and the Fraunhofer Institute for Integrated Systems and Device Technology (IISB) 1000 m2 clean room area Continuous process line for Si and SiC Analytics and electrical measurement technology, including: Semi-automatic 200 mm prober High-voltage prober Temperature-dependent characterization	South Campus of the Faculty of Engineering with the departments of Electrical Engineering, Electronics and Information Technology, Materials Science, Mechanical Engineering, Computer Science, Chemical and Bioengineering, Artificial Intelligence in Biomedical Engineering Fraunhofer Institute for Integrated Systems and Device Technology (IISB) Value chain from material (crystal) to system
Teaching
Fundamentals of semiconductor devices Lecture series on semiconductor technology (HLT) Integrated circuit technology, process and device simulation, reliability and failure analysis of integrated circuits, optical lithography Lecture series on semiconductor engineering (HL) Bipolar technology, CMOS technology, power semiconductor devices, nanoelectronics, semiconductor and device technology, flexible electronics Lecture series on quantum electronics (QE) Tunnel and quantum well devices, spintronics and quantum computation, selected chapters of advanced physics

Additional information:

The Chair of Electronic Components (LEB) is involved in applied research in the fields of technology and manufacturing of electronic components. The LEB maintains a clean room building with a total laboratory area of approximately 1000 m2. The chair works closely with the Fraunhofer Institute for Integrated Systems and Device Technology (IISB), which is headed by Prof. Schulze in a dual role. The chair’s research focuses on the development, characterization, and simulation of new manufacturing processes and devices, as well as the development and optimization of equipment and materials for micro- and nanoelectronics.

One focus of the research activities is the development and characterization of devices and materials with large band gaps, in particular silicon carbide (SiC) and gallium nitride (GaN). The fields of application range from photonics (including SiC UV sensors) to power electronics (including SiC power MOSFETs) and high-temperature applications to quantum electronic applications through the functionalization of color centers in SiC.

In addition, Dr. Saskia Schimmel’s research group is conducting research into the development of novel nitride semiconductors using ammonothermal synthesis.

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